Kingston KSM26SES8/16HC 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM
Kingston KSM26SES8/16HC 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM
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Description
Kingston KSM26SES8/16HC 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM
| Category | Specification |
|---|---|
| CAS Latency (CL / IDD) | 19 cycles |
| Row Cycle Time (tRCmin) | 45.75 ns (minimum) |
| Refresh to Active/Refresh Command Time (tRFCmin) | 350 ns (minimum) |
| Row Active Time (tRASmin) | 32 ns (minimum) |
| Maximum Operating Power | Not specified |
| UL Rating | 94 V-0 |
| Operating Temperature | 0 °C to +85 °C |
| Storage Temperature | −55 °C to +100 °C |
| Power Supply (VDD) | 1.2 V |
| Power Supply (VDDQ) | 1.2 V |
| Power Supply (VPP) | 2.5 V |
| VDDSPD Range | 2.20 V – 3.60 V |
| Memory Type | DDR4 SDRAM |
| Internal Banks | 16 banks |
| Bank Grouping | Supported with tCCD_L and tCCD_S |
| Supported Data Rates | PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600 |
| Data Strobe | Bi-directional differential data strobe |
| Prefetch | 8-bit prefetch |
| Burst Length Options | BL8 or BC4 (Burst Chop) selectable on-the-fly |
| ECC Support | Error detection and correction supported |
| On-Die Termination (ODT) | Supported |
| Temperature Sensor | Integrated with SPD |
| Addressability | Per-DRAM addressability supported |
| Internal Vref DQ | Internal Vref DQ generation available |
| Write CRC | Supported at all speed grades |
| CA Parity Mode | Command/Address parity supported |
| Compliance | RoHS compliant and Halogen-Free |
Additional information
| Brand | Kingston |
|---|
